2024-10-17

5SHX08F4510 | Reverse Conducting Integrated Gate-Commutated Thyristor

 

  • High snubberless turn-off rating
  • Optimized for medium frequency (<1 kHz) and

low turn-off losses

  • High reliability
  • High electromagnetic immunity
  • Simple control interface with status feedback
  • AC or DC supply voltage
  • Suitable for series connection (contact factory)

 

5SHX08F4510 handbook

Parameter Symbol Conditions min typ max Unit
Mounting force Fm 14 16 18 kN
Characteristic values
Parameter Symbol Conditions min typ max Unit
Pole-piece diameter Dp ± 0.1 mm 47 mm
Housing thickness H 25.9 26.4 mm
Weight m 1.01 kg
Surface creepage distance Ds Anode to Gate 33 mm
Air strike distance Da Anode to Gate 13 mm
Length l ± 1.0 mm 296 mm
Height h ± 1.0 mm 47 mm
Width IGCT w ± 1.0 mm 208 mm