ABB 5SHY4045L0004 Thyristor IGCT module
Product overview
The ABB 5SHY4045L0004 is a high-performance IGCT (Integrated Gate thyristor) module that belongs to ABB’s family of power electronics. IGCT is a kind of high power electronic device, which has the characteristics of fast switching, high voltage, high current, etc. It is widely used in the fields of medium voltage inverter, static reactive power compensation device, DC transmission and so on.
Product characteristics
High performance: It has the characteristics of fast switching speed, high voltage resistance, high current, etc., which can meet the high performance requirements of modern power electronic systems for power devices.
High reliability: With advanced manufacturing process and strict quality control, it has good reliability and stability.
Modular design: easy installation and maintenance, improve the reliability of the system.
Widely used: can be used in a variety of medium voltage inverter, static reactive power compensation device, DC power transmission and other fields.
ABB 5SHY4045L0004
Product parameter
Rated voltage :4500V
Rated current: Depends on the application scenario and heat dissipation condition
Switching speed: microsecond
On-pressure drop: Low, helps improve the efficiency of the system
Package type: modular package
In the mid-1990s, ABB researchers greatly reduced the requirements of the GTO drive circuit by optimizing the GTO drive unit and the device housing design, and adopted technologies such as integrated gates, and realized the technological leap from GTO to HD-GT0. However, the on-state loss of HD-GTO is relatively large, and researchers have learned from various loss reduction technologies accumulated in the development of IGBT in the process of medium and high voltage. The structure of HD-GTO is optimized, and it is named IGCT, integrated gate commutated thyristor, together with its integrated hard drive gating unit.
In summary, IGCT has both GTO on characteristics and IGBT switching characteristics, characterized by high current, high voltage, high switching frequency, high reliability, compact structure and low loss, the performance is significantly better than the current widely used GTO and IGBT devices.