3BHE039724R0C3D PPD513AOC-100440 | Integrated gate commutator transistor

Model: 3BHE039724R0C3D PPD513AOC-100440

Category: Integrated gate commutator transistor

Warranty: 365 days

Delivery time: 3-5 days/week

Net product thickness/length: 114.3 mm

Communication protocol: PROFIBUS DP

Transmission rate: 960 kbps, 1.5 Mbps, 3 Mbps

Node addresses: 0 to 255

Power supply voltage: 24 VDC

Power consumption: < 5 W

3BHE039724R0C3D PPD513AOC-100440 Integrated gate commutator transistor (IGCT) is an advanced power semiconductor device, the following is a detailed introduction about it:

Definition and structure:

Intergrated Gate Commutated Thyristors (IGCT) are a new type of power semiconductor device introduced in 1996, designed for large power electronics packages.

It is based on GTO (gate turn-off thyristor) structure, and adopts integrated gate structure to drive the gate hard, combined with buffer layer technology and anode transparent emitter technology.

Features and advantages:

The 3BHE039724R0C3D PPD513AOC-100440 IGCT combines the on-state characteristics of thyristors and the switching characteristics of transistors, with low on-state voltage drop, high blocking voltage and stable switching characteristics.

Because of the buffer structure and shallow emitter technology, the dynamic loss of IGCT is reduced by about 50%.

The continuous current diode with good dynamic response is integrated on a chip, and the performance of thyristor and transistor is organically combined.

Application and impact:

The 3BHE039724R0C3D PPD513AOC-100440 IGCT has made significant progress in terms of power, reliability, switching speed, efficiency, cost, volume and weight, and has brought innovation to power electronics packages.

The device has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low manufacturing cost, high yield, and shows a good application prospect.