3BHB017688R001 | IGBT power module | SNAT607 MCI | NTAI06

Model: 3BHB017688R001

Category: IGBT power module

Finish: New/not new

Warranty: One year

Express: SF Express/Debon

IGBT power module is an important power semiconductor device in the field of power electronics. The following is a detailed introduction to the IGBT power module:

Definition and composition:

IGBT (Insulated Gate Bipolar Transistor) is a compound fully controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate field effect tube).

3BHB017688R001 It has the advantages of both the high input impedance of MOSFET and the low on-voltage drop of GTR.

How it works:

When the control signal added to the gate of the IGBT is high voltage, the coupling capacitor between the gate and the source is charged, and the 3BHB017688R001 grid driver circuit is powered on. At this time, the gate voltage is higher than the critical voltage, which causes the P-N junction of the gate to reverse bias, thus blocking the current flow in the P-type region, and the IGBT is in the off state.

When the control signal becomes low, the capacitor between the gate and the source begins to discharge, resulting in a decrease in the gate voltage. When the grid voltage drops below the critical voltage, the P-N junction of the grid reverses, N-type electrons from above begin to inject downward into the P-type region, the current in the P-type region begins to flow, and the IGBT is in a conducting state.

Application field:

3BHB017688R001 IGBT module is widely used in AC power supply, motor driver, inverter and other fields.

Very suitable for DC voltage 600V and above converter system, such as AC motor, inverter, switching power supply, lighting circuit, traction drive and other fields.

Advantages:

High efficiency: The IGBT has a low on-resistance and can achieve high efficiency power regulation.

High-speed switch: IGBT can complete the switching operation in a short time, suitable for high-frequency circuits.