5SHX06F6004-3BHB003387R0101 | IGCT module

Model: 5SHX06F6004-3BHB003387R0101
Category:IGCT module
Finish: New/not new
Guarantee: One year

IGCT module is integrated gate converter thyristor (IntergratedGateCommutatedThyristors) abbreviation, it is a kind of more chips, multipoint voltage measuring device, to measure the voltage of the continuous changes and the change of time, and can store data. IGCT module is an important branch of IGBT technology, which has the advantages of small size, light weight, high efficiency, long life and easy control. It is a new type of power electronic device developed on the basis of GTO (gate turn-off thyristor) technology, by integrating the GTO chip with the anti-parallel diode and the gate driver circuit, and then connected with the gate driver in the peripheral with low inductance.

5SHX06F6004-3BHB003387R0101 IGCT module is in the same line as SCR in the rectification link, SCR is short for thyristor rectifier. Thyristors have one-way, two-way, turn-off and light control several types. IGCT module has the advantages of high blocking voltage, large capacity, low on-state loss and high reliability, and is widely used in various automatic control and high-power power conversion occasions such as controlled rectifier, voltage regulation, inverter and contactless switch. It can also be used in DC power grid as a switching device in the field of high-voltage and large-capacity power conversion.

5SHX06F6004-3BHB003387R0101 IGCT module is characterized by high symmetry and stability of the output trigger pulse, and does not change with the ambient temperature, and does not need to adjust the pulse symmetry and limit in use, field debugging generally does not need oscilloscope to complete.

5SHX06F6004-3BHB003387R0101 The advantages of high blocking voltage of IGCT module are mainly reflected in the following aspects:

High reliability: Due to the high blocking voltage of IGCT module, it can be used safely, reliably, economically and efficiently in the field of high-voltage and large-capacity power conversion. Its high-speed switching capability does not require buffer circuits, the number of power components required is less, and the operation reliability is greatly improved.

Low loss: 5SHX06F6004-3BHB003387R0101 IGCT module has low loss, small on-state pressure drop, and small on-state loss. It has the outstanding advantages of strong on-state voltage reduction and strong on-state voltage reduction, especially suitable for high voltage and high power frequency conversion devices.

Fast switching speed: The 5SHX06F6004-3BHB003387R0101 IGCT module uses de-” GTO zone “technology, that is, before the cathode NPN transistor completely stops injecting charge, the entire anode current quickly shifts from the cathode to the gate, greatly speeding up the shutdown process. As a result, its switching speed is 10 times faster than that of an ordinary GTO.

High capacity density: Due to the high blocking voltage of IGCT module, its capacity density is correspondingly increased, which can be applied to larger capacity power conversion systems.