5SHX10H6004 | 5SHX1445H0002 | Fast recovery diodes

Model: 5SHX10H6004
Category: Fast recovery diodes
Finish: new, not new
Guarantee: One year
Net product thickness/length: 94.5 mm
Product height: 26.4mm
Net weight: 0.83 kg
Product width: 94.5 mm

Definition: A fast recovery diode is a semiconductor diode with good switching characteristics and short reverse recovery time.
Features:

Short reverse recovery time: The 5SHX10H6004 fast recovery diode can recover from the reverse cutoff state to the positive pilot state in a very short time, which makes it a significant advantage in high-frequency rectification, switching power supply and other applications.
Low forward voltage drop: Due to the optimization of its internal structure, the forward voltage drop of the fast recovery diode is relatively low.
High reverse breakdown voltage: it can withstand high reverse operating voltage, which increases the safety and reliability of its use.
Second, structure and working principle
Structure: The internal structure of the 5SHX10H6004 fast recovery diode is different from that of the ordinary PN junction diode, which belongs to the PIN junction diode, that is, the base region I is added in the middle of the P-type silicon material and the N-type silicon material to form the PIN silicon wafer. This structure makes the reverse recovery charge small, thus shortening the reverse recovery time.
Working principle: When the diode is in the on-state and suddenly cuts off the current, the fast recovery diode can eliminate carrier diffusion from the N region to the P region faster by optimizing the material and structural design, so as to achieve fast recovery.