What is a high frequency inverter?
High-frequency inverter through high-frequency DC/AC conversion technology, the low-voltage direct current inverter into high-frequency low-voltage AC, and then through the high-frequency transformer boost, and then through the high-frequency rectifier filter circuit rectifier into usually more than 300V high-voltage direct current, and finally through the power frequency inverter circuit to get 220V power frequency AC for load use. Advantages and disadvantages of high-frequency inverter: the high-frequency inverter uses a small size and light weight of high-frequency magnetic core material, which greatly improves the power density of the circuit, making the no-load loss of the inverter power supply is very small, and the inverter efficiency has been improved. Usually, the peak conversion efficiency of high-frequency inverters reaches more than 90%. However, it also has significant disadvantages, high frequency inverter can not be connected to the inductive load of full load, and the overload capacity is poor.
The field cut-off channel technology of power inverter uses the channel gate structure and highly doped n+ buffer layer to obtain channel penetration characteristics. With these capabilities, this new IGBT technology achieves a higher cell density than the previous generation technology. As a result, it has a much lower on-state pressure drop for a given silicon area. The current density of the new field cutoff channel IGBT is more than twice that of the previous field cutoff plane technology. Figure 1 shows the tradeoff characteristics of the FGH75T65UPD, the new 75A/650V field cutoff channel IGBT, and the previous generation of FGH75N60UF, 75A/600V field cutoff plane IGBT. The FGH75T65UPD achieves 1.65V Vce(sat) at 25 ° C and 75A, while the FGH75N60UF delivers 1.9V under the same conditions. Taking into account the increase in the breakdown voltage to 650V and the decrease in the active area, this feature is significantly improved because the higher blocking voltage and smaller size lead to an increase in Vce(sat). This low Vce(sat) is the main advantage of the new field cut-off channel IGBT. The field cut-off channel technology also reduces the turn-off energy consumption per conversion cycle, as shown in Figure 1. This enhanced tradeoff enables inverter designs to meet market demands for higher system efficiency. Despite the reduced silicon area, the new field cut-off channel IGBTs provide 5us short circuit withstand time before failure due to thermal runaway, which was not available in the previous generation IGBTs. Xinchang cut-off channel IGBT also has a lower turn-off state leakage current, and the maximum junction temperature is 175℃